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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors DESCRIPTION *DC Current Gain -hFE = 30(Min)@ IC= 0.3A *Collector-Emitter Sustaining Voltage: VCEO(SUS) = 40V(Min)- BDT41F; 60V(Min)- BDT41AF 80V(Min)- BDT41BF; 100V(Min)- BDT41CF *Complement to Type BDT42F/AF/BF/CF APPLICATIONS *Designed for use in general purpose amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER BDT41F BDT41AF VCBO Collector-Base Voltage BDT41BF BDT41CF BDT41F Collector-Emitter Voltage BDT41AF BDT41BF BDT41CF VEBO IC ICM IB B BDT41F/AF/BF/CF VALUE 80 100 UNIT V 120 140 40 60 V 80 100 5 6 10 3 32 150 -65~150 V A A A W VCEO Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation TC=25 Junction Temperature Storage Temperature Range PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 6.3 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER BDT41F BDT41AF IC= 30mA; IB= 0 BDT41BF BDT41CF VCE(sat) VBE(on) ICES Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current BDT41F/AF BDT41BF/CF IC= 6A; IB= 0.6A B BDT41F/AF/BF/CF CONDITIONS MIN 40 60 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage V 80 100 1.5 2.0 0.4 V V mA IC= 6A ; VCE= 4V VCE= VCEOmax; VBE= 0 VCE= 30V; IB= 0 B ICEO Collector Cutoff Current 0.2 VCE= 60V; IB= 0 B mA IEBO hFE-1 hFE-2 fT Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain--Bandwidth Product VEB= 5V; IC= 0 IC= 0.3A ; VCE= 4V IC= 3A ; VCE= 4V IC= 0.5A ; VCE= 10V 30 15 3 0.5 mA 75 MHz Switching Times ton toff Turn-On Time IC= 6A; IB1= -IB2= 0.6A Turn-Off Time 1.0 s 0.6 s isc Websitewww.iscsemi.cn |
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